Gallium oxide (Ga₂O₃) is an emerging ultra-wide bandgap (~4.9 eV) semiconductor with excellent thermal and chemical stability, making it highly promising for next-generation deep-ultraviolet optoelectronic applications. Its intrinsic bandgap aligns perfectly with the solar-blind deep-ultraviolet spectrum (<280 nm), eliminating the need for complex bandgap engineering required in alloy systems. The monoclinic crystal structure of β-Ga₂O₃ provides strong optical anisotropy, enabling self-polarized detection for secure communication and imaging. Moreover, Ga2O3 exhibits high transparency and tunable conductivity, suitable for deep-ultraviolet transparent electrodes, while also serving as an excellent substrate for vertical LEDs and as a host for phosphor materials. Its robust properties further enable applications in photoelectrochemical water splitting and self-powered sensing. Large-scale Ga2O3-based imaging arrays are advancing applications in missile warning, corona detection, and space exploration. This session invites global researchers to discuss recent advances, address key challenges, and explore future directions in Ga₂O₃-based solar-blind deep-ultraviolet detectors and optoelectronic devices, fostering collaboration and innovation in this rapidly evolving field.